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ISC0804NLS Datasheet(PDF) 4 Page - Infineon Technologies AG |
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ISC0804NLS Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 11 page  4 OptiMOSTM5Power-Transistor,100V ISC0804NLS Rev.2.1,2021-04-01 Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 100 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.1 1.6 2.3 V VDS=VGS,ID=28µA Zero gate voltage drain current IDSS - - 0.1 10 1 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - - 10.3 13.3 10.9 14.9 m Ω VGS=10V,ID=20A VGS=4.5V,ID=10A Gate resistance 1) RG - 1.3 - Ω - Transconductance gfs - 39 - S |VDS| ≥2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance 1) Ciss - 1200 1600 pF VGS=0V,VDS=50V,f=1MHz Output capacitance 1) Coss - 200 270 pF VGS=0V,VDS=50V,f=1MHz Reverse transfer capacitance 1) Crss - 10 13 pF VGS=0V,VDS=50V,f=1MHz Turn-on delay time td(on) - 6.1 - ns VDD=50V,VGS=4.5V,ID=20A, RG,ext=1.6 Ω Rise time tr - 6.8 - ns VDD=50V,VGS=4.5V,ID=20A, RG,ext=1.6 Ω Turn-off delay time td(off) - 12 - ns VDD=50V,VGS=4.5V,ID=20A, RG,ext=1.6 Ω Fall time tf - 3.0 - ns VDD=50V,VGS=4.5V,ID=20A, RG,ext=1.6 Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 3.8 - nC VDD=50V,ID=20A,VGS=0to4.5V Gate charge at threshold Qg(th) - 2.0 - nC VDD=50V,ID=20A,VGS=0to4.5V Gate to drain charge Qgd - 3.3 - nC VDD=50V,ID=20A,VGS=0to4.5V Switching charge Qsw - 5.0 - nC VDD=50V,ID=20A,VGS=0to4.5V Gate charge total 1) Qg - 9.2 12 nC VDD=50V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 3.1 - V VDD=50V,ID=20A,VGS=0to4.5V Gate charge total 1) Qg - 18 24 nC VDD=50V,ID=20A,VGS=0to10V Output charge Qoss - 24 - nC VDS=50V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition |
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