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STF20NM60A Datasheet(PDF) 3 Page - STMicroelectronics

Part # STF20NM60A
Description  N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I짼PAK/TO-220/TO-220FP
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF20NM60A Datasheet(HTML) 3 Page - STMicroelectronics

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STB20NM60A-1/STP20NM60A/STF20NM60A
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 10A
11
S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS =0
1630
pF
Coss
Output Capacitance
350
pF
Crss
Reverse Transfer
Capacitance
33
pF
Coss eq. (2)
Equivalent Output
Capacitance
VGS =0V, VDS = 0V to 400V
150
pF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =300V, ID =10 A
RG =4.7Ω VGS =10V
(see test circuit, Figure 3)
20
ns
tr
Rise Time
16
ns
Qg
Total Gate Charge
VDD =400V, ID = 20A,
VGS =10V
45
60
nC
Qgs
Gate-Source Charge
8.2
nC
Qgd
Gate-Drain Charge
19
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off Delay Time
VDD =300V, ID =20A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
46
ns
tf
Fall Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
20
A
ISDM (2)
Source-drain Current (pulsed)
80
A
VSD (1)
ForwardOnVoltage
ISD =20A,VGS =0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =20A,di/dt =100A/µs,
VDD =50 V,Tj =25°C
(see test circuit, Figure 5)
432
5.1
23.6
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD =20A,di/dt =100A/µs,
VDD =50 V,Tj = 150°C
(see test circuit, Figure 5)
595
7.3
24.8
ns
µC
A



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