SI7894ADP datasheet(2/3 Pages) TFUNK

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Vishay Siliconix

SPICE Device Model Si7894ADP

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.2

On-State Drain Current

ID(on)

VDS ≥ 5 V, VGS = 10 V

1583

VGS = 10 V, ID = 25 A

0.0029

0.0028

Drain-Source On-State Resistance

rDS(on)

VGS = 4.5 V, ID = 23 A

0.0036

0.0035

Ω

Forward Transconductance

gfs

VDS = 15 V, ID = 25 A

218

110

Diode Forward Voltage

VSD

IS = 2.9 A, VGS = 0 V

0.76

0.70

Dynamic

Total Gate Charge

Gate-Source Charge

Qgs

11.5

Gate-Drain Charge

Qgd

VDS = 15 V, VGS = 4.5 V, ID = 25 A

11.5

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 73195

S-60244

Rev. B, 20-Feb-06

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