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OP58TS
Photo Diode
■ Absolute Maximum Ratings
(Ta= 25℃)
■ Electro-Optical Characteristics
(Ta=25℃)
Opto-Device Technology
℃
℃
℃
V
Unit
-30 ~ 90
-20 ~ 80
150
30
Ratings
TSTG
TOPR
TJ
BVR
Symbol
Storage Temperature
Operating Temperature
Junction Temperature
Reverse Breakdown Voltage
Parameter
*1 : Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K
2
■ Description
The OP58TS is a high speed, high output pin photo diode,
mounted in a low-cost PCB package.
■ Features
●
High output power
●
High-speed response
●
Easy to mount on PCB
●
Low dark current
■ Applications
●
Fiber optic communication
●
Optical switches
㎂
-
4
-
Condition*2
ISC
nm
1100
-
450
λ
Spectrum Sensitivity
㎷/℃
-
-2.2
-
αt
Temp. Coefficient of Voc
㎁
100
-
VR=5V
ID
Dark Current
nm
-
940
-
λp
Peak Sensing Wavelength
V
-
70
30
Ir=10㎂
BVR
Reverse Breakdown Voltage
%/℃
-
0.18
-
βt
Temp. Coefficient of Isc
Deg.
㎊
㎂
V
Unit
-
-
-
-
Max
±60
22
30.5
0.38
Typ
-
-
19
0.35
Min
f=1MHz
Ev=1,000lux *1
Ev=1,000lux *1
Conditions
ΔΘ
Ct
ISC
Voc
Symbol
Capacitance
Short Circuit Current
Open Circuit Voltage
Half Angle
Parameter
*2 : Light source : Laser Diode (λ=780nm), IF=20, Distance = 30mm
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