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M69KB096AB Datasheet(PDF) 66 Page - STMicroelectronics |
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M69KB096AB Datasheet(HTML) 66 Page - STMicroelectronics |
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66 / 73 page ![]() 10 Wafer and die specifications M69KB096AB 66/73 10 Wafer and die specifications Table 24. Dimensions Wafer Diameter 200mm (8") Wafer Thickness 750± 25µm (29.5±1.0mil) Die Size (stepping interval) 5,009.365µm x 5,005.795µm Street Width Along X-Axis (dsw_X) 102µm Street Width Along Y-Axis (dsw_Y) 102µm Center of Street (COS) (relative to Bond Pad 1) X = -222.98µm, Y = 160.08µm (X = -8.779mil, Y = 6.303mil) Bond Pad Size 85µm x 100µm (3.35mil x 3.94mil) Passivation Openings (MIN) 75µm x 90µm (2.95mil x 3.54mil) Minimum Bond Pad Pitch 119.00µm (4.685mil) Pad Count 71 |
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