Data Sheet

ADL8150ACHIP

Rev. 0 | Page 13 of 14

APPLICATIONS INFORMATION

BIASING PROCEDURES

The ADL8150ACHIP is a self biased GaAs, MMIC, HBT, low

phase noise amplifier. Figure 34 shows the typical application

circuit. Adhere to the following bias sequence during power-up:

pin (see Figure 34).

3. Apply the RF input signal.

Adhere to the following bias sequence during power-down:

1. Turn off the RF input signal.

Handling Precautions

To avoid permanent damage to the die, follow these storage,

cleanliness, static sensitivity, transient, and general handling

precautions:

•

Place all bare die in either waffle-based or gel-based ESD

protective containers and then seal the die in an ESD

protective bag for shipment. After the sealed ESD

protective bag is opened, store all die in a dry nitrogen

environment.

•

Handle the chips in a clean environment. Do not attempt

to clean the chip using liquid cleaning systems.

•

Follow ESD precautions to protect against ESD strikes.

•

When the bias is applied, suppress instrument and bias

supply transients. Use a shielded signal and bias cables to

minimize inductive pickup.

•

Handle the chip along the edges with a vacuum collet or

with a sharp pair of tweezers. The chip surface has fragile

air bridges and must not be touched with a vacuum collet,

tweezers, or fingers.

Mounting

Before the epoxy die is attached to the ADL8150ACHIP, apply

a minimum amount of epoxy (must order separately) to the

mounting surface so that a thin epoxy fillet is observed around

the perimeter of the chip after it is placed into position. Cure

the epoxy per the schedule of the manufacturer.

Wire Bonding

RF bonds made with 3 mil × 0.5 mil gold ribbon are

recommended to be used with the RF ports. These bonds must

be thermosonically bonded with a force between 40 g and 60 g.

DC bonds of 0.025 mm (1 mil) in diameter, thermosonically

bonded, are recommended for bond wire connections. Create

ball bonds with a force between 40 g and 50 g, and wedge bonds

with a force between 18 g and 22 g. Create all bonds with a

nominal stage temperature of 150°C. Apply a minimum

amount of ultrasonic energy to achieve reliable bonds. Keep all

bonds as short as possible, less than 0.31 mm (12 mil).

ASSEMBLY AND TYPICAL APPLICATION CIRCUIT

DIAGRAMS

Figure 35 shows the assembly diagram, and Figure 34 shows the

typical application circuit diagram.

RFIN

2

1

Figure 34. Typical Application Circuit

50Ω TRANSMISSION LINE

1MIL GOLD WIRES

RFIN

3MIL NOMINAL GAP

Figure 35. Assembly Diagram