IXFR50N50 datasheet(1/2 Pages) IXYS

Part #	IXFR50N50

Description	HiPerFET-TM Power MOSFETs ISOPLUS247-TM

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 2 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

500

V

DGR

T

J

= 25

°C to 150°C; R

GS = 1 MΩ

500

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

50N50

43

A

55N50

48

A

I

DM

T

C

= 25

°C, Pulse width limited by T

JM

50N50

200

A

55N50

220

A

I

AR

T

C

= 25

°C

50N50

50

A

55N50

55

A

E

AR

T

C

= 25

°C60

mJ

E

AS

T

C

= 25

°C3

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

400

W

T

J

-40 ... +150

°C

T

JM

150

°C

T

stg

-40 ... +150

°C

T

L

1.6 mm (0.063 in.) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

Weight

5

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

min.

typ.

max.

V

DSS

V

GS = 0 V, ID = 1mA

500

V

GS(th)

V

DS = VGS, ID = 8mA

2.5

4.5 V

I

GSS

V

GS

=

±20 V, V

DS = 0

±200 nA

I

DSS

V

DS

= V

DSS

T

J

= 25

°C

25

µA

V

GS = 0 V

T

J

= 125

°C2 mA

R

DS(on)

V

GS = 10 V, ID = IT

50N50

100 m

Ω

Note 1

55N50

90 m

Ω

98588B (04/02)

ISOPLUS 247TM

G

D

HiPerFETTM Power MOSFETs

ISOPLUS247TM

(Electrically Isolated Back Surface)

Single Die MOSFET

Features

l Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l Low drain to tab capacitance(<50pF)

l Low R

DS (on) HDMOS

TM process

l Rugged polysilicon gate cell structure

l Unclamped Inductive Switching (UIS)

rated

l Fast intrinsic Rectifier

Applications

l DC-DC converters

l Battery chargers

l Switched-mode and resonant-mode

power supplies

l DC choppers

l AC motor control

Advantages

l Easy assembly

l Space savings

l High power density

G = Gate

D = Drain

S = Source

* Patent pending

Isolated back surface*

V

DSS

I

D25

R

DS(on)

IXFR 50N50

500 V

43 A

100 m

Ω

IXFR 55N50

500 V

48 A

90 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

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