ICS162835 datasheet(4/7 Pages) ICST

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ICS162835

Advance Information

0713—09/23/02

Electrical Characteristics - DC

TA = 0 - 70° C; VDD = 3.3 ± 0.3V, VDDQ=3.3 ± 0.3V; (unless otherwise stated)

SYMBOL

PARAMETERS

CONDITIONS

VDD (V)

MIN

TYP

MAX

UNITS

VIH

HIGH-level input voltage

3.0 - 3.6

2.0

VIL

LOW-level input voltage

3.0 - 3.6

0.8

VOH

HIGH-level output voltage

IOH = -12 mA, VIH = 2.0V

3.0

2.2

VOL

Low-level output voltage

IOL = 12 mA, VIL = 0.8V

3.0

0.8

Input leakage current

VI = VDD or GND

3.0 - 3.6

±10

µA

IOZ

Off-state leakage current

VO = VDD or GND#, OE = VDD

±20

µA

IDD

Quiescent Supply Current

VI = VDD or GND, IO = 0

±40

µA

* Parameters are characterized over recommended operating conditions.

Critical Register Specifications*

SYMBOL

PARAMETERS

CONDITION

VDD (V)

MIN

TYP

MAX

UNITS

tPD**

Propagation Delay (CK to Y)

RL = 500 Ω, CL = 50 pF

3.0 - 3.6

1.4

3.5

tPD**

Propagation Delay (CK to Y)

RL = 500 Ω, CL = 30 pF

3.0 - 3.6

0.7

2.5

Setup time (A before CK)

3.0 - 3.6

1.0

Hold time (A after CK)

3.0 - 3.6

0.6

Clock input capacitance

3.0 - 3.6

3.3

4.0

6.0

* Parameters are characterized over recommended operating conditions.

** The tPD value in this table would equate to the 'Time-to-Vm' delay described in the post register timing specifications of the

PC133 registered DIMM Specification. The first value applies to DIMMs with nine SDRAM loads per register output, and the

second to DIMMs with eighteen SDRAM loads per register output. These values should serve as only an initial starting point,

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