ZXTD3M832

SEMICO NDUC TORS

ISSUE 1 - JUNE 2003

2

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient

(a)(f)

83.3

C/W

Junction to Ambient

(b)(f)

51

C/W

Junction to Ambient

(b)(f)

125

C/W

Junction to Ambient

(d)(f)

111

C/W

Junction to Ambient

(d)(g)

73.5

C/W

Junction to Ambient

(e)(g)

41.7

C/W

NOTES

The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual

device.

(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions with all exposed pads attached.

The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions with all exposed pads attached.

The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.

(f) For dual device with one active die.

(g) For dual device with 2 active die running at equal power.

(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.

(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the

package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz weight,

1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500mW

THERMAL RESISTANCE

PARAMETER

SYMBOL

LIMIT

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-40

V

Emitter-Base Voltage

-7.5

V

Peak Pulse Current

-4

A

Continuous Collector Current

(a) (f)

-3

A

Base Current

-1000

mA

Power Dissipation at TA=25°C

(a)(f)

Linear Derating Factor

1.5

12

W

mW/ C

Power Dissipation at TA=25°C

(b)(f)

Linear Derating Factor

2.45

19.6

W

mW/ C

Power Dissipation at TA=25°C

(c)(f)

Linear Derating Factor

1

8

W

mW/ C

Power Dissipation at TA=25°C

(d)(f)

Linear Derating Factor

1.13

9

W

mW/ C

Power Dissipation at TA=25°C

(d)(g)

Linear Derating Factor

1.7

13.6

W

mW/ C

Power Dissipation at TA=25°C

(e)(g)

Linear Derating Factor

3

24

W

mW/ C

Operating & Storage Temperature Range

-55 to +150

C

Junction Temperature

150

C

ABSOLUTE MAXIMUM RATINGS