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LM2D16P01 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM2D16P01
Description  LCE P-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM2D16P01 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Description
The LM2D16P01 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages .This device is suitable for use as a load switching
application and a wide variety of other applications.
General Features
●
VDS = -12V,ID = -16A
RDS(ON) < 22mΩ @ VGS=-2.5V
RDS(ON) < 18mΩ @ VGS=-4.5V
●
Advanced trench MOSFET process technology
●
Ultra low on-resistance with low gate charge
Application
●
PWM applications
●
Load switch
●
Battery charge in cellular handset
D
G
S
Schematic diagram
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
Device
Device Package
Reel Size
Tape Width
Quantity
NCE1216
LM2D16P01
DFN2X2-6L
-
-
-
Absolute maximum ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-12
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
-16
A
Drain Current -Pulsed (Note 1)
IDM
-65
A
Maximum Power Dissipation
PD
18
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJC
6.9
/W
℃
LM2D16P01
LCE P-Channel Enhancement Mode Power MOSFET
Rev :
www.leiditech.com
01.06.2017
1/5


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