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LM6L4P06 Datasheet(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM6L4P06
Description  LCE P-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM6L4P06 Datasheet(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-60V,VGS=0V
-
-
-1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.0
-1.8
-2.5
V
VGS=-10V, ID=-4A
-
106
120
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=-4.5V, ID=-3A
-
135
170
mΩ
Forward Transconductance
gFS
VDS=-5V,ID=-4A
-
10
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
930
-
PF
Output Capacitance
Coss
-
85
-
PF
Reverse Transfer Capacitance
Crss
VDS=-30V,VGS=0V,
F=1.0MHz
-
35
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
8
-
nS
Turn-on Rise Time
tr
-
4
-
nS
Turn-Off Delay Time
td(off)
-
32
-
nS
Turn-Off Fall Time
tf
VDD=-30V, RL=7.5Ω，
VGS=-10V,RG=3Ω
-
7
-
nS
Total Gate Charge
Qg
-
25
-
nC
Gate-Source Charge
Qgs
-
3
-
nC
Gate-Drain Charge
Qgd
VDS=-30,ID=-4A,
VGS=-10V
-
7
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=-4A
-
-1.2
V
Diode Forward Current
(Note 2)
IS
-
-
-4
A
Reverse Recovery Time
trr
-
25
nS
Reverse Recovery Charge
Qrr
TJ = 25°C, IF =- 4A
di/dt = -100A/μs
(Note3)
-
31
nC
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Rev :
www.leiditech.com
01.06.2018
2/6
LM6L4P06



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