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LM3404B Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3404B Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 5 page ![]() LM3404B 30V N-Channel Enhancement Mode MOSFET Description General Features Application ● ● ● Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 3404B LM3404B SOT-23 Ø180mm 8 mm 3000 units Dimensions SOT-23 Pin Configuration Rev : 01.0 7.2021 1/ www.leiditech.com Absolute Maximum Ratings (TC=25℃unless otherwise noted) 5 The LM3404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. VDS = 30V ID =4.2A RDS(ON) < 38mΩ @ VGS=10V Lithium battery protection Wireless impact Mobile phone fast charging Symbol Parameter Max. Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current 4.2 A ID@TA=70℃ Continuous Drain Current 2.6 A IDM Pulsed Drain Current 16 A PD Power Dissipation TA = 25℃ 1 W RθJA Thermal Resistance, Junction to Ambient 125 ℃ /W TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ |
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Similar Description - LM3404B |
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