FDMC0310AS datasheet(3/8 Pages) ONSEMI

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Electrical Characteristics T

J = 25 °C unless otherwise noted

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

BVDSS

Drain to Source Breakdown Voltage

ID = 1 mA, VGS = 0 V30

ΔBV

DSS

ΔT

Breakdown Voltage Temperature

Coefficient

ID = 10 mA, referenced to 25 °C

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V, VGS = 0 V500

μA

IGSS

Gate to Source Leakage Current, Forward

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = 1 mA

1.2

1.6

3.0

ΔV

GS(th)

ΔT

Gate to Source Threshold Voltage

Temperature Coefficient

ID = 10 mA, referenced to 25 °C

-5

mV/°C

rDS(on)

Static Drain to Source On Resistance

VGS = 10 V, ID = 19 A

3.8

4.4

VGS = 4.5 V, ID = 17.5 A4.5

5.2

VGS = 10 V, ID = 19 A,

TJ = 125 °C

4.5

5.8

gFS

Forward Transconductance

VDS = 5 V, ID = 19 A

106

Ciss

Input Capacitance

VDS = 15 V, VGS = 0 V,

f = 1 MHz

2380

3165

Coss

Output Capacitance

885

1175

Crss

Reverse Transfer Capacitance

100

150

Gate Resistance

0.1

0.7

2.5

td(on)

Turn-On Delay Time

VDD = 15 V, ID = 19 A,

VGS = 10 V, RGEN = 6 Ω

Rise Time

510

td(off)

Turn-Off Delay Time

Fall Time

410

Total Gate Charge

VGS = 0 V to 10 V

VDD = 15 V,

ID = 19 A

Total Gate Charge

VGS = 0 V to 4.5 V18

Qgs

Gate to Source Charge

Qgd

Gate to Drain “Miller” Charge

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = 2 A

(Note 2)

0.6

0.8

VGS = 0 V, IS = 19 A

(Note 2)

0.8

1.2

trr

Reverse Recovery Time

IF = 19 A, di/dt = 300 A/μs

Qrr

Reverse Recovery Charge

Notes:

1. RθJA is determined with the device mounted on a 1 in

2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V. 100% tested at L= 3 mH, IAS = 10.2 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

a. 53 °C/W when mounted on a

1 in2 pad of 2 oz copper.

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.

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