LM9926B datasheet(2/3 Pages) LEIDITECH

2 / 3 page

Electrical Characteristics(TA=25°C unless otherwise specified)

Rev : 01.06.2014

2/3

www.leiditech.com

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

BVGSO

±12

VGS(th)

0.5

0.8

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.7

3.5

Ciss

630

Coss

164

Crss

137

1.5

Ω

8.8

Qgs

1nC

Qgd

3.7

tD(on)

5.5

tD(off)

10.2

trr

15.2

Qrr

6.3

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=4.5V, VDS=5V

VGS=10V, ID=7.6A

Reverse Transfer Capacitance

IF=7.6A, dI/dt=100A/µs

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Gate Threshold Voltage

VDS=VGS ID=250uA

VDS=16V, VGS=0V

Zero Gate Voltage Drain Current

VDS=0V, VGS=±10V

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Ω

VGS=2.5V, ID=6A

IS=1A,VGS=0V

VDS=5V, ID=7.6A

VGS=1.8V, ID=2A

VGS=4.5V, ID=7A

Turn-On Rise Time

Turn-Off DelayTime

VGS=5V, VDS=10V, RL=1.3Ω,

RGEN=3Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge

VGS=4.5V, VDS=10V, ID=7.6A

Gate Source Charge

Turn-On DelayTime

DYNAMIC PARAMETERS

VGS=0V, VDS=10V, f=1MHz

Gate Drain Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Gate-Source Breakdown Voltage

VDS=0V, IG=±250uA

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

value in any given application depends on the user's specific board design. The currentand power rating is based on the t

≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Rev 1: June 2005

LM9926B

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