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LMPC200N06 Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LMPC200N06 Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 6 page  LMPC200N06 Description The LMPC200N06 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =60V,ID =200A RDS(ON)=1.8mΩ (typical) @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification Schematic diagram TO-263T-2L top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP60T20D LMPC200N06 TO-263-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (Silicon Limited) ID 200 A Drain Current-Continuous(TC=100℃) ID (100℃) 150 A Pulsed Drain Current IDM 800 A Maximum Power Dissipation PD 255 W Derating factor 1.7 W/℃ Single pulse avalanche energy (Note 5) EAS 2000 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 0.59 /W ℃ Super Trench Power MOSFET N-Channel Rev : www.leiditech.com 01.06.2018 1/6 |
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