FDMA6676PZ datasheet(2/7 Pages) ONSEMI

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FDMA6676PZ

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ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Ratings

Unit

VDS

Drain to Source Voltage

−30

VGS

Gate to Source Voltage

±25

Drain Current − Continuous,

TA = 25°C (Note 1a)

−11

− Pulsed

(Note 3)

−165

Power Dissipation

TA = 25°C (Note 1a)

2.4

Power Dissipation

TA = 25°C (Note 1b)

0.9

TJ, TSTG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Characteristic

Value

Unit

RqJA

Thermal Resistance, Junction to Ambient

(Note 1a)

°C/W

RqJA

Thermal Resistance, Junction to Ambient

(Note 1b)

145

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

BVDSS

Drain to Source Breakdown Voltage

ID = −250 mA, VGS = 0 V

−30

DBVDSS / DTJ

Breakdown Voltage Temperature

Coefficient

ID = −250 mA,

Referenced to 25°C

−19

mV/°C

IDSS

Zero Gate Voltage Drain Current

VDS = −24 V, VGS = 0 V

−1

IGSS

Gate to Source Leakage Current

VGS = ±25 V, VDS = 0 V

±10

ON CHARACTERISTICS

VGS(th)

Gate to Source Threshold Voltage

VGS = VDS, ID = −250 mA

−1.2

−2

−2.6

DVGS(th) / DTJ

Gate to Source Threshold Voltage

Temperature Coefficient

ID = −250 mA,

Referenced to 25°C

5.9

mV/°C

rDS(on)

Static Drain to Source On Resistance VGS = −10 V, ID = −11 A

13.5

VGS = −4.5 V, ID = −8 A

VGS = −10 V, ID = −11 A, TJ = 125°C

14.5

gFS

Forward Transconductance

VDD = −5 V, ID = −11 A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VDS = −15 V, VGS = 0 V, f = 1 MHz

1440

2160

Coss

Output Capacitance

477

720

Crss

Reverse Transfer Capacitance

458

690

Gate Resistance

SWITCHING CHARACTERISTICS

td(on)

Turn−On Delay Time

VDD = −15 V, ID = −11 A,

VGS = −10 V, RGEN = 6 W

8.8

Rise Time

td(off)

Turn−Off Delay Time

139

Fall Time

115

Total Gate Charge

VGS = 0 V to −10 V,

VDD = −15 V, ID = −11 A

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