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MMBT2222AT Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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MMBT2222AT Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 3 page ![]() MMBT2222AT Rev 2.0 : www.leiditech.com 01.06.2021 1/3 SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complementary to MMBT2907AT Small Package MARKING:1P MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25 ℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=10µA, IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 40 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 6 V Collector cut-off current ICEX VCE=60V, VEB(off)=3V 10 nA hFE(1) VCE=10V, IC=0.1mA 35 hFE(2) VCE=10V, IC=1mA 50 hFE(3) VCE=10V, IC=10mA 75 hFE(4) VCE=10V, IC=150mA 100 300 DC current gain hFE(5) VCE=10V, IC=500mA 40 IC=150mA, IB=15mA 0.3 V Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1 V IC=150mA, IB=15mA 1.2 V Collector-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 2 V Transition frequency fT VCE=20V,IC=20mA, f=100MHz 300 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 8 pF Delay time td VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 10 ns Rise time tr VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA 25 ns Storage time ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ns Fall time tf VCC=30V, IC=150mA, IB1= IB2=15mA 60 ns Symbol Parameter Value Unit VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 150 mW RΘJA Thermal Resistance from Junction to Ambient 833 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ SOT–523 1. BASE 2. EMITTER 3. COLLECTOR |
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