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LTC2995 Datasheet(PDF) 7 Page - Analog Devices |
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LTC2995 Datasheet(HTML) 7 Page - Analog Devices |
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7 / 90 page ![]() LTM2985 7 Rev. 0 For more information www.analog.com Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Full scale ADC error. Measurements do not include reference error. Note 3: Guaranteed by design, not subject to test. Note 4: The input referred noise includes the contribution of internal calibration operations. Note 5: MUX configuration delay = default 1ms. Note 6: Global configuration set to 60Hz rejection. Note 7: Global configuration set to 50Hz rejection. Note 8: Global configuration default 50Hz/60Hz rejection. Note 9: The exact value of VREF is stored in the LTM2985 and used for all measurement calculations. Temperature coefficient is measured by dividing the maximum change in output voltage by the specified temperature range. Note 10: Analog power-up. Command status register inaccessible during this time. Note 11: Digital initialization. Begins at the conclusion of analog power-up. Command status register is 0×80 at the beginning of digital initialization and 0×40 at the conclusion. Note 12: Long-term stability typically has a logarithmic characteristic and therefore, changes after 1000 hours tend to be much smaller than before that time. Total drift in the second thousand hours is normally less than one third that of the first thousand hours with a continuing trend toward reduced drift with time. Long-term stability will also be affected by differential stresses between the IC and the board material created during board assembly. Note 13: Hysteresis in output voltage is created by package stress that differs depending on whether the IC was previously at a higher or lower temperature. Output voltage is always measured at 25°C, but the IC is cycled to the hot or cold temperature limit before successive measurements. Hysteresis measures the maximum output change for the averages of three hot or cold temperature cycles. For instruments that are stored at well controlled temperatures (within 20 or 30 degrees of operational temperature), it is usually not a dominant error source. Typical hysteresis is the worst-case of 25°C to cold to 25°C or 25°C to hot to 25°C, preconditioned by one thermal cycle. Note 14: Differential Input Range is ±VREF/2. Note 15: RTD and thermistor measurements are made ratiometrically. As a result, current source excitation variation does not affect absolute accuracy. Choose an excitation current such that largest sensor or RSENSE resistance value, when driven by the nominal excitation current, will drop 1V or less. The extended ADC input range will accommodate variation in excitation current and the ratiometric calculation will negate the absolute value of the excitation current. Note 16: 10-year data retention guaranteed for up to 1000 program cycles. Note 17: Do not apply voltage or current sources to these pins. They must be connected to capacitive loads only. Otherwise, permanent damage may occur. Note 18: Input leakage measured with VIN = –10mV and VIN = 2.5V. Note 19: This Module includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above specified maximum operating junction temperature may result in device degradation or failure. Note 20: Device considered a 2-terminal device. Pin group A1 through C11 shorted together and pin group R1 through T11 shorted together. Note 21: The rated dielectric insulation voltage should not be interpreted as a continuous voltage rating. LTM2985 EEPROM CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. PARAMETER CONDITIONS MIN TYP MAX UNITS Retention (Notes 3, 16) l 10 Years Endurance (Note 3) l 10000 Cycles Programming Time Complete Transfer from RAM to EEPROM l 2600 ms Read Time Complete Transfer from EEPROM to RAM l 20 ms |
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