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BC856 Datasheet(PDF) 1 Page - FutureWafer Tech Co.,Ltd |
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BC856 Datasheet(HTML) 1 Page - FutureWafer Tech Co.,Ltd |
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1 / 12 page ![]() 1 Document Number:F51841P 21-May-2021 V 2.0 www.futurewafer.com.tw BC856 / BC857 / BC858 PNP Silicon Epitaxial General Purpose Transistors SOT-23 2. Mechanical Characteristics ● Molded JEDEC SOT-23 Package ● Packaging: Tape and Reel ● Flammability rating UL 94V-0 ● Halogen Free 3. Device Characteristics Maximum Ratings@25°C Unless Otherwise Specified Parameter Symbol Value Units Collector Base Voltage BC856 V CBO -80 V dc BC857 -50 BC858 -30 Collector Emitter Voltage BC856 V CEO -65 BC857 -45 BC858 -30 Emitter Base Voltage BC856 V EBO -6.0 BC857 -6.0 BC858 -5.0 Collector Current I C -100 mAdc Total Device Dissipation FR-5 Board P D -200 mW Junction Temperature T J -55 to 150 ° C Storage Temperature T STG 1. Features List ● Complementary PNP types available ● For switching and AF Amplifier applications ● Totally Lead-Free Pin 1 : Base Pin 2 : Emitter Pin 3 : Collector 1 2 3 |
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