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MSC010SDA070K Datasheet(PDF) 2 Page - Microchip Technology

Part # MSC010SDA070K
Description  Zero Recovery Silicon Carbide Schottky Diode
PDF  12 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MSC010SDA070K Datasheet(HTML) 2 Page - Microchip Technology

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1.
Device Specifications
This section shows the specifications of the MSC010SDA070K device.
1.1
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC010SDA070K device. TC = 25 °C unless
otherwise specified.
Table 1-1. Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
VR
Maximum DC reverse voltage
700
V
VRRM
Maximum peak repetitive reverse voltage
VRWM
Maximum working peak reverse voltage
IF
Maximum DC forward current
TC = 25 °C
24
A
TC = 135 °C 10
TC = 145 °C 8
IFRM
Repetitive peak forward surge current (TC = 25 °C, tp = 8.3 ms, half
sine wave)
34
IFSM
Non-repetitive forward surge current (TC = 25 °C, tp = 8.3 ms, half
sine wave)
58
PTOT
Total power dissipation
TC = 25 °C
83
W
TC = 110 °C 36
EAS
Single-pulse avalanche energy (starting TJ = 25 °C,
peak IL = 10 A)
100
mJ
The following table shows the thermal and mechanical characteristics of the MSC010SDA070K device.
Table 1-2. Thermal and Mechanical Characteristics
Symbol
Characteristic/Test Conditions
Min
Typ
Max
Unit
RθJC
Junction-to-case thermal resistance
1.30
1.80
°C/W
TJ, TSTG
Operating junction and storage temperature
range
–55
175
°C
TL
Lead temperature for 10 seconds
300
Wt
Package weight
0.07
oz
1.9
g
Mounting torque, 6-32 or M3 screw
10
lbf-in
1.1
N-m
MSC010SDA070K
Device Specifications
© 2021 Microchip Technology Inc.
Datasheet
DS-00003907A-page 2



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