AOP607 datasheet(2/7 Pages) AOSMD

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AOP607

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

IGSS

100

VGS(th)

1.5

2.3

ID(ON)

TJ=125°C

Ω

gFS

VSD

0.78

Ciss

450

540

Coss

Crss

1.65

Ω

Qg(10V)

8.5

10.5

Qg(4.5V)

4.3

5.5

Qgs

1.6

Qgd

2.2

tD(on)

5.1

2.6

tD(off)

15.9

2ns

trr

25.1

Qrr

28.7

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

VGS=0V, VDS=30V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Reverse Transfer Capacitance

Gate resistance

Output Capacitance

IS=1A,VGS=0V

VGS=10V, ID=4.7A

Diode Forward Voltage

VGS=10V, VDS=30V, RL=6Ω,

RGEN=3Ω

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Total Gate Charge

VGS=10V, VDS=30V, ID=4.7A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Ω

VGS=4.5V, ID=4A

VDS=5V, ID=4.7A

Gate Threshold Voltage

VDS=VGS ID=250µA

On state drain current

VGS=10V, VDS=5V

µA

Gate-Body leakage current

VDS=0V, VGS= ±20V

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=48V, VGS=0V

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Body Diode Reverse Recovery Charge

Total Gate Charge

IF=4.7A, dI/dt=100A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

IF=4.7A, dI/dt=100A/µs

Input Capacitance

A: The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The SOA

curve provides a single pulse rating.

Rev 1 : Aug 2005

Alpha & Omega Semiconductor, Ltd.

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