AOU400 datasheet(1/5 Pages) AOSMD

Part #	AOU400

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

51

60

RθJC

1.4

2.5

±20

Pulsed Drain Current

Gate-Source Voltage

Drain-Source Voltage

ID

38

27

Continuous Drain

Current

B

TC=25°C

G

TC=100°C

B

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

A

30

140

60

Parameter

Maximum

Units

60

A

Repetitive avalanche energy L=0.1mH

C

mJ

Power Dissipation

B

TC=25°C

PD

W

TC=100°C

30

Avalanche Current

C

Junction and Storage Temperature Range

-55 to 175

Thermal Characteristics

Parameter

Units

°C

Maximum Junction-to-Case

B

Steady-State

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

AOU400

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 60V

ID = 38A (VGS = 10V)

RDS(ON) < 20mΩ (VGS = 10V)

RDS(ON) < 25mΩ (VGS = 4.5V)

General Description

The AOU400 uses advanced trench technology to

provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AOU400 is Pb-free

(meets ROHS & Sony 259 specifications). AOU400L

is a Green Product ordering option. AOU400 and

AOU400L are electrically identical.

G

D

S

G

D

S

TO-251

Top View

Drain Connected to

Tab

Alpha & Omega Semiconductor, Ltd.

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AOU400 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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