AOU412 datasheet(1/5 Pages) AOSMD

Part #	AOU412

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 5 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

RθJA

105

125

RθJL

1

1.5

TC=100°C

ID

85

65

W

Junction and Storage Temperature Range

A

PD

°C

100

50

-55 to 175

120

mJ

Continuous Drain

Current

B,G

Maximum

Units

Parameter

TC=25°C

G

TC=100°C

B

30

200

Avalanche Current

C

30

Pulsed Drain Current

Power Dissipation

B

TC=25°C

Gate-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

±20

Drain-Source Voltage

A

Repetitive avalanche energy L=0.1mH

C

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

°C/W

Maximum Junction-to-Ambient

A

Steady-State

AOU412

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V

ID = 85A (VGS = 10V)

RDS(ON) < 7.5mΩ (VGS = 10V)

RDS(ON) < 11mΩ (VGS = 4.5V)

General Description

The AOU412 uses advanced trench technology to

provide excellent RDS(ON), low gate chargeand low

gate resistance. This device is ideally suited for use

as a high side switch in CPU core power conversion.

Standard Product AOU412 is Pb-free (meets ROHS

& Sony 259 specifications). AOU412L is a Green

Product ordering option. AOU412 and AOU412L are

electrically identical.

G

D

S

Top View

Drain

Connected to

Tab

TO-251

G

D

S

Alpha & Omega Semiconductor, Ltd.

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AOU412 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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