AO4607 datasheet(6/8 Pages) AOSMD

6 / 8 page

AO4607

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-1.2

-2

-2.4

ID(ON)

TJ=125°C

Ω

gFS

VSD

-0.76

-1

-4.2

Ciss

920

1100

Coss

190

Crss

122

3.6

4.4

Ω

Qg(10V)

18.5

22.2

Qg(4.5V)

9.6

Qgs

2.7

Qgd

4.5

tD(on)

7.7

5.7

tD(off)

20.2

9.5

trr

Qrr

8.8

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: Sept 2005

Body Diode Reverse Recovery Time

IF=-6A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs

Turn-On DelayTime

VGS=-10V, VDS=-15V, RL=2.7Ω,

RGEN=3Ω

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge (10V)

VGS=-10V, VDS=-15V, ID=-6A

Reverse Transfer Capacitance

Gate resistance

DYNAMIC PARAMETERS

Input Capacitance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

Diode Forward Voltage

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

Output Capacitance

VDS=-5V, ID=-6A

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

VGS=-10V, ID=-6A

Ω

VGS=-4.5V, ID=-5A

Gate Threshold Voltage

VDS=VGS ID=-250µA

On state drain current

VGS=-10V, VDS=-5V

µA

Gate-Body leakage current

VDS=0V, VGS=±20V

Drain-Source Breakdown Voltage

ID=-250µA, VGS=0V

IDSS

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Parameter

Conditions

STATIC PARAMETERS

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any ven application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating. 2005

A: The value of R θJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C.

The value in any given application depends on the user's specific board design. The current rating is based on the t

≤ 10s thermal

resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C. The

SOA curve provides a single pulse rating.

Alpha Omega Semiconductor, Ltd.

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