AOF800L datasheet(4/7 Pages) AOSMD

4 / 7 page

AO4F800

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

VDS=5V, ID=8.8A

1040

180

110

0.7

VGS=10V, VDS=15V, ID=8.8A

VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω

IF=8.8A, dI/dt=100A/µs

Qg (nC)

Figure 7: Gate-Charge Characteristics

250

500

750

1000

1250

1500

VDS (Volts)

Figure 8: Capacitance Characteristics

Ciss

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Coss

Crss

0.1

1.0

10.0

100.0

0.1

100

VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

100

µs

10ms

1ms

0.1s

10s

RDS(ON)

limited

µs

VDS=15V

ID=8.3A

Single Pulse

D=Ton/T

TJ,PK=TA+PDM.ZθJA.RθJA

RθJA=62.5°C/W

Ton

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

TJ(Max)=150°C

TA=25°C

f=1MHz

VGS=0V

TJ(Max)=150°C, TA=25°C

Alpha & Omega Semiconductor, Ltd.

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