1

Publication date: August 2003

SJJ00156BED

Composite Transistors

Silicon NPN epitaxial planar type

For general amplification

■ Features

• Two elements incorporated into one package

(Base-coupled transistors)

• Reduction of the mounting area and assembly cost by one half

■ Basic Part Number

• 2SD0601A (2SD601A) × 2

■ Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Internal Connection

Marking Symbol: 5W

123

4

5

Tr1

Tr2

Note) The part number in the parenthesis shows conventional part number.

■ Electrical Characteristics T

a

= 25°C ± 3°C

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

60

V

Collector-emitter voltage (Base open)

50

V

Emitter-base voltage (Collector open)

7V

Collector current

100

mA

Peak collector current

200

mA

Total power dissipation

150

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Ratio between 2 elements

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

V

Collector-emitter voltage (Base open)

= 2 mA, I

B

= 050

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

0.1

µA

Collector-emitter cutoff current (Base open)

= 10 V, I

B

= 0

100

µA

Forward current transfer ratio

160

460



0.50

0.99



Large)

Collector-emitter saturation voltage

0.1

0.3

V

Transition frequency

= 10 V, I

E

= −2 mA, f = 200 MHz

150

MHz

Collector output capacitance

= 10 V, I

E

= 0, f = 1 MHz

3.5

pF

(Common base, input open circuited)

1: Emitter (Tr1)

4: Collector (Tr2)

2: Base

5: Collector (Tr1)

3: Emitter (Tr2)

EIAJ: SC-88A

SMini5-G1 Package

1

3

2

54

(0.65) (0.65)

0.12

+0.05

–0.02

10˚