NTC080N120SC1 datasheet(2/8 Pages) ONSEMI

2 / 8 page

June, 2020 − Rev. 0

Publication Order Number:

NTC080N120SC1/D

MOSFET – N‐Channel,

Silicon Carbide

1200 V, 80 mW

NTC080N120SC1

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

• 1200 V @ TJ= 175°C

• Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A

• High Speed Switching with Low Capacitance

• 100% UIL Tested

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Industrial Motor Drive

• UPS

• Boost Inverter

• PV Charger

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DIE DIAGRAM

Die Information

S Wafer Diameter

6 inch

S Die Size

2,900 x 2,900 mm

⋅ Top

Ti/TiN/Al

5 mm

⋅ Back

Ti/V/Ni/Ag

S Die Thickness

Typ. 200 mm

S Metallization

S Gate Pad Size

632 x 242.5 mm

V(BR)DSS

RDS(on) MAX

ID MAX

1200 V

110 mW @ 20 V

31 A

N−CHANNEL MOSFET

NTC080N120SC1 Datasheet(PDF) 2 Page - ON Semiconductor

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