SI7465DP datasheet(2/12 Pages) VISHAY

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Si7465DP

www.vishay.com

Vishay Siliconix

S13-2263-Rev. D, 04-Nov-13

Document Number: 73113

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-1

-3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = -60 V, VGS = 0 V

-1

μA

VDS = -60 V, VGS = 0 V, TJ = 70 °C

-10

On-State Drain Currenta

ID(on)

VDS  -5 V, VGS = -10 V

-25

Drain-Source On-State Resistancea

RDS(on)

VGS = -10 V, ID = -5 A

0.051

0.064



VGS = -4.5 V, ID = -4.5 A

0.064

0.080

Forward Transconductancea

gfs

VDS = -15 V, ID = -5 A

Diode Forward Voltagea

VSD

IS = -2.9 A, VGS = 0 V

-0.8

-1.2

Dynamicb

Total Gate Charge

VDS = -30 V, VGS = -10 V, ID = -5 A

Gate-Source Charge

Qgs

4.5

Gate-Drain Charge

Qgd

Gate Resistance



Turn-On Delay Time

td(on)

VDD = -30 V, RL = 30 

ID  -1 A, VGEN = –10 V, Rg = 6 

815

Rise Time

915

Turn-Off Delay Time

td(off)

100

Fall Time

Source-Drain Reverse Recovery Time

trr

IF = -5 A, dI/dt = 100 A/μs

2468

VGS = 10 V thru 5 V

3 V

VDS - Drain-to-Source Voltage (V)

4 V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

25 °C

TC= 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

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