IRF830APBF datasheet(2/9 Pages) VISHAY

2 / 9 page

IRF830A

www.vishay.com

Vishay Siliconix

S21-0852-Rev. D, 16-Aug-2021

Document Number: 91061

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-62

°C/W

Case-to-sink, flat, greased surface

RthCS

0.50

Maximum junction-to-case (drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

500

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

0.60

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.5

Gate-source leakage

IGSS

VGS = ± 30 V

± 100

Zero gate voltage drain current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 3.0 A b

1.4

Forward transconductance

gfs

VDS = 50 V, ID = 3.0 A b

2.8

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

-620

Output capacitance

Coss

-93

Reverse Transfer capacitance

Crss

-4.3

Output capacitance

Coss

VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz

886

Output capacitance

Coss

VGS = 0 V; VDS = 400 V, f = 1.0 MHz

Effective output capacitance

Coss eff.

VGS = 0 V; VDS = 0 V to 400 V c

Total gate charge

VGS = 10 V

ID = 5.0 A, VDS = 400 V,

see fig. 6 and 13 b

Gate-source charge

Qgs

6.3

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VDD = 250 V, ID = 5.0 A,

Rg = 14

Ω, RD = 49 Ω, see fig. 10 b

-10

Rise time

-21

Turn-off delay time

td(off)

-21

Fall time

-15

Gate input resistance

f = 1 MHz, open drain

1.7

10.7

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

5.0

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 5.0 A, VGS = 0 V b

1.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/μs b

430

650

Body diode reverse recovery charge

Qrr

1.62

2.4

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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