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2SD1624 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SD1624 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 7 page ![]() 2SB1124/2SD1624 No.2019-2/7 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 500 mW When mounted on ceramic substrate (250mm2×0.8mm) 1.5 W Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=(--)40V, IE=0A (--)1 μA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 μA DC Current Gain hFE1VCE=(--)2V, IC=(--)100mA 100* 560* hFE2VCE=(--)2V, IC=(--)3A 35 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)50mA 150 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (39)25 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)2A, IB=(--)100mA (--0.35)0.19 (--0.7)0.5 V Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)2A, IC=(--)100mA (--)0.94 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V Turn-ON Time ton See specified Test Circuit. (70)70 ns Storage Time tstg (450)650 ns Fall Time tf (35)35 ns * ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit Ordering Information Device Package Shipping memo 2SB1124S-TD-E PCP 1,00pcs./reel Pb Free 2SB1124S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SB1124T-TD-E PCP 1,00pcs./reel Pb Free 2SB1124T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624S-TD-E PCP 1,00pcs./reel Pb Free 2SD1624S-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free 2SD1624T-TD-E PCP 1,00pcs./reel Pb Free 2SD1624T-TD-H PCP 1,00pcs./reel Pb Free and Halogen Free VR RB 25V --5V + + 50 Ω INPUT OUTPUT 25 Ω 100 μF 470 μF PW=20 μs IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. IB1 D.C. ≤1% IB2 |
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