NTLJS7D2P02P8Z datasheet(4/6 Pages) ONSEMI

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NTLJS7D2P02P8Z

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

0.4

0.3

10K

100

0.7

1.0

VGS = 0 V

0.6

CISS

COSS

CRSS

0.8

TJ = 25°C

TJ = −55°C

TJ = 125°C

520

0.5

0.9

f = 1 MHz

VGS = 0 V

TJ = 25°C

VGS = −4.5 V

VDS = −15 V

ID = −10 A

td(on)

td(off)

QGS

QGD

VDS = −10 V

ID = −10 A

TJ = 25°C

DEVICE ORDERING INFORMATION

Device

Package

Shipping†

NTLJS7D2P02P8ZTAG

WDFN6

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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