STF15NM65N datasheet(3/15 Pages) STMICROELECTRONICS

Part #	STF15NM65N

Description	N-channel 650 V, 0.35 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP and I²PAKFP packages

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STF15NM65N, STFI15NM65N

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

I2PAKFP

VDS

Drain source voltage

650

VGS

Gate source voltage

± 25

Drain current continuous Tc = 25 °C

12(1)

Limited by maximum junction temperature.

Drain current continuous Tc = 100 °C

7.56

IDM

(2)

Pulse width limited by safe operating area.

Drain current pulsed

PTOT

Total dissipation at Tc = 25 °C

dv/dt(3)

ISD

≤12 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V

(BR)DSS, VDD = 80 % V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS

from all three leads to external

heatsink

(t = 1 s; TC = 25 °C)

2500

Operating junction temperature range

-55 to 150

°C

Tstg

Storage temperature range

Table 3. Thermal data

Symbol

Parameters

Value

Unit

TO-220FP

I2PAKFP

Rthjc

Thermal resistance junction-case

4.17

°C/W

Rthj-amb

Thermal resistance junction-ambient

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameters

Value

Unit

IAS

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

187

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