STGF6M65DF2 datasheet(5/17 Pages) STMICROELECTRONICS

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STGF6M65DF2

Electrical characteristics

DocID028668 Rev 3

5/17

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 6 A, VGE = 15 V,

RG = 22

Ω (see Figure 29: " Test circuit

for inductive load switching")

Current rise

time

5.8

(di/dt)on

Turn-on

current slope

828

A/µs

td(off)

Turn-off-delay

time

Current fall

time

130

Eon(1)

Turn-on

switching

energy

0.036

Eoff(2)

Turn-off

switching

energy

0.200

Ets

Total switching

energy

0.236

td(on)

Turn-on delay

time

VCE = 400 V, IC = 6 A, VGE = 15 V,

RG = 25

Ω TJ = 175 °C (see Figure 29: "

Test circuit for inductive load switching" )

Current rise

time

(di/dt)on

Turn-on

current slope

685

A/µs

td(off)

Turn-off-delay

time

Current fall

time

205

Eon(1)

Turn-on

switching

energy

0.064

Eoff(2)

Turn-off

switching

energy

0.290

Ets

Total switching

energy

0.354

tsc

Short-circuit

withstand time

VCC

≤ 400 V, VGE = 15 V, TJstart = 150 °C

µs

VCC

≤ 400 V, VGE = 13 V, TJstart = 150 °C

Notes:

(1)Turn-on switching energy includes reverse recovery of the diode.

(2)Turn-off switching energy also includes the tail of the collector current.

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