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STL45N60DM6 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL45N60DM6 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GADG101220180929SOA 102 101 100 10-1 10-2 10-3 10-1 100 101 102 ID (A) VDS (V) tp =10 µs tp =100 µs tp =1 ms tp =10 ms tp=1 µs TJ ≤ 150 °C, TC = 25 °C, single pulse Operation in this area is limited by RDS(on) Figure 2. Thermal impedance 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 K tp (s) δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 δ = 0.02 δ = 0.01 Single pulse Zth PowerFLAT 8x8 HV Figure 3. Output characteristics GADG200720171438OCH 80 60 40 20 0 0 4 8 12 16 ID (A) VDS (V) VGS = 9, 10 V VGS = 8 V VGS = 7 V VGS = 6 V VGS = 5 V Figure 4. Transfer characteristics GADG200720171438TCH 80 60 40 20 0 4 5 6 7 8 ID (A) VGS (V) VDS = 18 V Figure 5. Gate charge vs gate-source voltage GADG200720171438QVG 12 10 8 6 4 2 0 600 500 400 300 200 100 0 0 8 16 24 32 40 48 VGS (V) VDS (V) Qg (nC) VDS VDD = 480 V ID = 30 A Figure 6. Static drain-source on-resistance GADG220120190924RID 0.112 0.106 0.100 0.094 0.088 0.082 0.076 0 5 10 15 20 25 RDS(on) (Ω) ID (A) VGS = 10 V STL45N60DM6 Electrical characteristics (curves) DS11670 - Rev 5 page 5/14 |
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