STP150N10F7AG datasheet(2/12 Pages) STMICROELECTRONICS

Part #	STP150N10F7AG

Description	Automotive N-channel 100 V, 4.2 mΩ typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

100

VGS

Gate-source voltage

±20

ID(1)

Drain current (continuous) at TC = 25 °C

110

Drain current (continuous) at TC = 100 °C

IDM(2)

Drain current (pulsed)

440

PTOT

Total power dissipation at TC = 25 °C

250

IAV

Single pulse avalanche current (pulse width limited by maximum junction

temperature)

EAS

Single pulse avalanche energy

(TJ = 25 °C, ID = IAV, VDD = 25 V)

650

Operating junction temperature range

-55 to 175

°C

Tstg

Storage temperature range

1. Current limited by package.

2. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case

0.6

°C/W

RthJB(1)

Thermal resistance, junction-to-board

62.5

°C/W

1. When mounted on 1 inch² FR-4, 2 Oz copper board.

STP150N10F7AG

Electrical ratings

DS13798 - Rev 1

page 2/12

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