STPSC10H065DLF datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STPSC10H065DLF

Description	650 V, 10 A power Schottky silicon carbide diode

PDF	12 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

Figure 5. Junction capacitance versus reverse voltage

applied (typical values)

100

200

300

400

500

600

0.1

1.0

10.0

100.0

1000.0

VR(V)

Cj(pF)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

Figure 6. Relative variation of thermal impedance junction

to case versus pulse duration

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Single pulse

tp(s)

Zth(j-c) /Rth(j-c)

Figure 7. Non-repetitive peak surge forward current

versus pulse duration (sinusoidal waveform)

1.E+01

1.E+02

1.E+03

1.E-05

1.E-04

1.E-03

1.E-02

tp(s)

IFSM(A)

Ta=25 °C

Ta=125 °C

Figure 8. Total capacitive charges versus reverse voltage

applied (typical values)

100

150

200

250

300

350

400

VR(V)

QCj(nC)

Figure 9. Thermal resistance junction to ambient versus copper surface under tab (typical values)

100

125

SCu(cm²)

Rth(j-a) (°C/W)

PowerFlat_8X8

epoxy printed board FR4, eCu = 70 µm

STPSC10H065DLF

Characteristics (curves)

DS13179 - Rev 2

page 5/12

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