IRF830SPBF datasheet(2/10 Pages) VISHAY

2 / 10 page

IRF830S, SiHF830S, IRF830L, SiHF830L

www.vishay.com

Vishay Siliconix

S16-0754-Rev. E, 02-May-16

Document Number: 91064

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-62

°C/W

Maximum Junction-to-Ambient



(PCB mount) a

RthJA

-40

Maximum Junction-to-Case (Drain)

RthJC

-1.7

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

500

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.61

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 2.7 Ab

1.5



Forward Transconductance

gfs

VDS = 50 V, ID = 2.7 Ab

2.5

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

610

Output Capacitance

Coss

160

Reverse Transfer Capacitance

Crss

-68

Total Gate Charge

VGS = 10 V

ID = 3.1 A, VDS = 400 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

5.0

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 3.1 A,

Rg = 12 , RD = 79 , see fig. 10b

-8.2

Rise Time

-16

Turn-Off Delay Time

td(off)

-42

Fall Time

-16

Internal Drain Inductance

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Gate Input Resistance

f = 1 MHz, open drain

0.5

2.7



Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol



showing the



integral reverse



p - n junction diode

4.5

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/μsb

320

640

Body Diode Reverse Recovery Charge

Qrr

-1.0

2.0

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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