IRFIB6N60APBF datasheet(2/10 Pages) VISHAY

2 / 10 page

IRFIB6N60A

www.vishay.com

Vishay Siliconix

S21-0975-Rev. F, 11-Oct-2021

Document Number: 91175

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Pulse width

≤ 300 μs; duty cycle ≤ 2 %

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

d. t = 60 s, f = 60 Hz

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient

RthJA

-65

°C/W

Maximum junction-to-case (drain)

RthJC

-2.1

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-ssource breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

600

VDS temperature coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA d

660

mV/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-source leakage

IGSS

VGS = ± 30 V

± 100

Zero gate voltage drain current

IDSS

VDS = 600 V, VGS = 0 V

μA

VDS = 480 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 10 V

ID = 3.3 A b

0.75

Forward transconductance

gfs

VDS = 25 V, ID = 5.5 A

5.5

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1400

Output capacitance

Coss

180

Reverse transfer capacitance

Crss

-7.1

Output capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

1957

VDS = 480 V, f = 1.0 MHz

Effective output capacitance

Coss eff.

VDS = 0 V to 480 V c

-96

Total gate charge

VGS = 10 V

ID = 9.2 A, VDS = 400 V,

see fig. 6 and 13 b

Gate-source charge

Qgs

Gate-drain charge

Qgd

Turn-on delay time

td(on)

VDD = 300 V, ID = 9.2 A,

RG = 9.1

Ω, RD = 35.5 Ω,

see fig. 10 b

-13

Rise time

-25

Turn-off delay time

td(off)

-30

Fall time

-22

Gate input resistance

f = 1 MHz, open drain

0.5

3.2

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol

showing the

integral reverse

p - n junction diode

5.5

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 9.2 A, VGS = 0 V b

1.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b

530

800

Body diode reverse recovery charge

Qrr

-3.0

4.4

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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