IRFP22N50APBF datasheet(2/11 Pages) VISHAY

2 / 11 page

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Document Number: 91207

S11-0446-Rev. C, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

IRFP22N50A, SiHFP22N50A

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 µs; duty cycle  2 %.

c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-40

°C/W

Case-to-Sink, Flat, Greased Surface

RthCS

0.24

Maximum Junction-to-Case (Drain)

RthJC

-0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.55

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 30 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 13 Ab

0.23



Forward Transconductance

gfs

VDS = 50 V, ID = 13 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

3450

Output Capacitance

Coss

513

Reverse Transfer Capacitance

Crss

-27

Output Capacitance

Coss

VGS = 0 V

VDS = 1.0 V, f = 1.0 MHz

4935

VDS = 400 V, f = 1.0 MHz

137

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 Vc

264

Total Gate Charge

VGS = 10 V

ID = 22 A, VDS = 400 V,

see fig. 6 and 13b

120

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 250 V, ID = 22 A,

RG = 4.3 , RD = 11, see fig. 10b

-26

Rise Time

-94

Turn-Off Delay Time

td(off)

-47

Fall Time

-47

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

TJ = 25 °C, IS = 22A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 22 A, dI/dt = 100 A/µsb

570

850

Body Diode Reverse Recovery Charge

Qrr

-6.1

9.2

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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