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STM32L031C6 Datasheet(PDF) 55 Page - STMicroelectronics

Part # STM32L031C6
Description  Access line ultra-low-power 32-bit MCU Arm®-based Cortex®-M0, up to 32KB Flash, 8KB SRAM, 1KB EEPROM, ADC
PDF  126 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L031C6 Datasheet(HTML) 55 Page - STMicroelectronics

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DS10668 Rev 6
55/126
STM32L031x4/6
Electrical characteristics
96
6.3.3
Embedded internal reference voltage
The parameters given in Table 23 are based on characterization results, unless otherwise
specified.
Table 22. Embedded internal reference voltage calibration values
Calibration value name
Description
Memory address
VREFINT_CAL
Raw data acquired at temperature
of 25 °C, VDDA= 3 V
0x1FF8 0078 - 0x1FF8 0079
Table 23. Embedded internal reference voltage(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VREFINT out(2)
Internal reference voltage
– 40 °C < TJ < +125 °C 1.202
1.224
1.242
V
TVREFINT
Internal reference startup time
-
-
2
3
ms
VVREF_MEAS
VDDA voltage during VREFINT
factory measure
-2.99
3
3.01
V
AVREF_MEAS
Accuracy of factory-measured
VREFINT value(3)
Including uncertainties
due to ADC and VDDA
values
--
±5
mV
TCoeff(4)
Temperature coefficient
–40 °C < TJ < +125 °C
-
25
100
ppm/°C
ACoeff(4)
Long-term stability
1000 hours, T = 25 °C
-
-
1000
ppm
VDDCoeff(4)
Voltage coefficient
3.0 V < VDDA < 3.6 V
-
-
2000
ppm/V
TS_vrefint(4)(5)
ADC sampling time when
reading the internal reference
voltage
-5
10
-
µs
TADC_BUF(4)
Startup time of reference
voltage buffer for ADC
--
-
10
µs
IBUF_ADC(4)
Consumption of reference
voltage buffer for ADC
-
-
13.5
25
µA
IVREF_OUT(4)
VREF_OUT output current(6)
--
-
1
µA
CVREF_OUT(4)
VREF_OUT output load
-
-
-
50
pF
ILPBUF(4)
Consumption of reference
voltage buffer for VREF_OUT
and COMP
-
-
730
1200
nA
VREFINT_DIV1(4) 1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2(4) 1/2 reference voltage
-
49
50
51
VREFINT_DIV3(4) 3/4 reference voltage
-
74
75
76
1. Refer to Table 35: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current
consumption (IREFINT).
2. Guaranteed by test in production.
3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
4. Guaranteed by design.
5. Shortest sampling time can be determined in the application by multiple iterations.
6. To guarantee less than 1% VREF_OUT deviation.



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