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MF1P2131DA4/02 Datasheet(PDF) 25 Page - NXP Semiconductors

Part # MF1P2131DA4/02
Description  MIFARE Plus EV1
PDF  33 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MF1P2131DA4/02 Datasheet(HTML) 25 Page - NXP Semiconductors

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NXP Semiconductors
MF1P(H)x1y1
MIFARE Plus EV1
MF1P(H)x1y1
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2019. All rights reserved.
Product short data sheet
Rev. 3.2 — 6 December 2018
COMPANY PUBLIC
366932
25 / 33
10 Limiting values
Stresses above one or more of the limiting values may cause permanent damage to the
device. Exposure to limiting values for extended periods may affect device reliability.
Table 9. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
II
input current
-
50
mA
Ptot/pack
total power dissipation per package
-
200
mW
Tstg
storage temperature
-55
125
°C
Tamb
ambient temperature
-25
70
°C
VESD
electrostatic discharge voltage on LA/LB [1]
-
2
kV
[1]
ANSI/ESDA/JEDEC JS-001; Human body model
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.



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