NTMTS0D6N04CL datasheet(2/8 Pages) ONSEMI

2 / 8 page

January, 2019 − Rev. 1

Publication Order Number:

NTMTS0D6N04CL/D

NTMTS0D6N04CL

Power MOSFET

40 V, 0.42 mW, 554.5 A, Single N−Channel

Features

• Small Footprint (8x8 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• Power Tools, Battery Operated Vacuums

• UAV/Drones, Material Handling

• BMS/Storage, Home Automation

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

Gate−to−Source Voltage

VGS

±20

Continuous Drain

Current RqJC (Note 2)

Steady

State

TC = 25°C

554.5

TC = 100°C

392.1

Power Dissipation

RqJC (Note 2)

Steady

State

TC = 25°C

245.4

TC = 100°C

122.7

Continuous Drain

Current RqJA

(Notes 1, 2)

Steady

State

TA = 25°C

78.9

TA = 100°C

55.8

Power Dissipation

RqJA (Notes 1, 2)

Steady

State

TA = 25°C

5.0

TA = 100°C

2.5

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

204.5

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 52.7 A)

EAS

2058

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State (Note 2)

RqJC

0.61

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

30.2

1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu pad.

2. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

www.onsemi.com

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

V(BR)DSS

RDS(ON) MAX

ID MAX

40 V

0.42 mW @ 10 V

554.5 A

0.66 mW @ 4.5 V

G (1)

S (2−4)

N−CHANNEL MOSFET

D (5−8)

POWER 88

CASE 507AP

MARKING DIAGRAM

XXXXXXXX

AWLYWW

XXX = Device Code

(8 A−N characters max)

= Assembly Location

WL = 2−digit Wafer Lot Code

= Year Code

WW = Work Week Code

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