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SIRC04DP Datasheet(PDF) 5 Page - Vishay Siliconix

Part # SIRC04DP
Description  N-Channel 30 V (D-S) MOSFET With Schottky Diode
PDF  9 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIRC04DP Datasheet(HTML) 5 Page - Vishay Siliconix

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SiRC04DP
www.vishay.com
Vishay Siliconix
S21-0840-Rev. B, 09-Aug-2021
5
Document Number: 62954
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating a
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
24
48
72
96
120
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
PACKAGE LIMITED
0
12
24
36
48
60
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
T
A - Ambient Temperature (°C)



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