SiRC10DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

1

Document Number: 75189

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

N-Channel 30 V (D-S) MOSFET With Schottky Diode

FEATURES

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck

• Synchronous rectification

•DC/DC conversion

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

PRODUCT SUMMARY

30

0.0035

0.0052

11.2

Configuration

Single

Top View

1

6.15

mm

5.15

mm

Bottom View

4

G

3

S

2

S

1

S

D

8

D

6

D

7

D

5

N-Channel MOSFET

G

S

D

Schottky

Diode

ORDERING INFORMATION

Package

PowerPAK SO-8 Single

Lead (Pb)-free and halogen-free

SiRC10DP-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

30

V

Gate-source voltage

+20 / -16

A

Pulsed drain current (t = 100 μs)

150

Continuous source-drain diode current

30

Single pulse avalanche current

L = 0.1 mH

15

Single pulse avalanche energy

11.25

mJ

Maximum power dissipation

43

W

27.5

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

≤ 10 s

24

34

°C/W

Maximum junction-to-case (drain)

Steady state

2.3

2.9