SiSA01DN

www.vishay.com

Vishay Siliconix

S17-1370-Rev. A, 04-Sep-17

1

Document Number: 76198

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

P-Channel 30 V (D-S) MOSFET

FEATURES

package that is thermally enhanced

• Enables higher power density

• Material categorization: for definitions of compliance

APPLICATIONS

• Battery management in mobile devices

• Adapter and charger switch

• Battery switch

•Load switch

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

PRODUCT SUMMARY

-30

0.0049

0.0082

27

Configuration

Single

Top View

1

3.3

mm

3.3

mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

S

G

D

P-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and halogen-free

SiSA01DN-T1-GE3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

-30

V

Gate-source voltage

+16 / -20

A

Pulsed drain current (t = 100 μs)

-150

Continuous source-drain diode current

-47.2

Single pulse avalanche current

L = 0.1 mH

-25

Single pulse avalanche energy

31.2

mJ

Maximum power dissipation

52

W

33

Operating junction and storage temperature range

-55 to +150

°C

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

t

 10 s

24

33

°C/W

Maximum junction-to-case (drain)

Steady state

1.9

2.4