SISA04DN datasheet(1/13 Pages) VISHAY

Part #	SISA04DN

Description	N-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SiSA04DN

www.vishay.com

Vishay Siliconix

S12-0309-Rev. A, 13-Feb-12

1

Document Number: 63709

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET ® Gen IV power MOSFET

• 100 % Rg and UIS tested

• Material categorization:



for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Switch mode power supplies

• Personal computers and servers

• Telecom bricks

•VRM’s and POL

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

e. Maximum under steady state conditions is 81 °C/W

f. Based on TC = 25 °C

g. Package limited

PRODUCT SUMMARY

VDS (V)

30

RDS(on) max. () at VGS = 10 V

0.00215

RDS(on) max. () at VGS = 4.5 V

0.00310

Qg typ. (nC)

22.5

ID (A) f, g

40

Configuration

Single

PowerPAK® 1212-8 Single

Top View

1

3.3

mm

3.3

mm

Bottom View

1

S

1

S

2

S

3

S

4

G

D

8

D

7

D

6

D

5

N-Channel MOSFET

G

D

S

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and halogen-free

SiSA04DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

VDS

30

V

Gate-source voltage

VGS

+20, -16

Continuous drain current (TJ = 150 °C)

TC = 25 °C

ID

40 g

A

TC = 70 °C

40 g

TA = 25 °C

30.9 a, b

TA = 70 °C

28.3 a, b

Pulsed drain current (t = 300 μs)

IDM

80

Continuous source-drain diode current

TC = 25 °C

IS

40 g

TA = 25 °C

3.3 a, b

Single pulse avalanche current

L = 0.1 mH

IAS

20

Single pulse avalanche energy

EAS

20

mJ

Maximum power dissipation

TC = 25 °C

PD

52

W

TC = 70 °C

43

TA = 25 °C

3.7 a, b

TA = 70 °C

3.1 a, b

Operating junction and storage temperature range

TJ, Tstg

-55 to +150

°C

Soldering recommendations (peak temperature) c, d

260

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient a, e

t

 10 s

RthJA

24

33

°C/W

Maximum junction-to-case (drain)

Steady state

RthJC

1.9

2.4

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