TLLE4401, TLLK4401

www.vishay.com

Vishay Semiconductors

Rev. 1.6, 19-Nov-2020

1

Document Number: 83343

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

High Intensity LED in Ø 3 mm Tinted Diffused Package

DESCRIPTION

These devices have been designed to meet the increasing

demand for AlInGaP technology general indicating and

lighting purposes.

They are housed in a 3 mm diffused plastic package. The

wide viewing angle of these devices provides a high

brightness.

All packing units are categorized in luminous intensity

groups. That allows users to assemble LEDs with uniform

appearance.

PRODUCT GROUP AND PACKAGE DATA

• Product group: LED

•Package: 3 mm

• Product series: low current

• Angle of half intensity: ± 30°

FEATURES

• AlInGaP technology

• Standard Ø 3 mm (T-1) package

• Small mechanical tolerances

• Wide viewing angle

• Very high intensity

• Low power consumption

• Luminous intensity categorized

• ESD-withstand voltage: up to 2 kV HBM according to

JESD22-A114-B

• Material categorization: for definitions of compliance

APPLICATIONS

• Status lights

•Off / on indicator

• Background illumination

• Readout lights

• Maintenance lights

•Legend light

• Low power DC circuits

Note

19222

PARTS TABLE

PART

COLOR

LUMINOUS INTENSITY

(mcd)

(mA)

WAVELENGTH

(nm)

(mA)

FORWARD VOLTAGE

(V)

(mA)

TECHNOLOGY

MIN.

TYP.

MAX.

MIN.

TYP. MAX.

MIN.

TYP.

MAX.

TLLK4401

Super red

6.3

17

32

2

626

630

639

2

1.6

1.8

2.2

2

AllnGaP on GaAs

TLLK4401-AS21

Super red

6.3

17

32

2

626

630

639

2

1.6

1.8

2.2

2

AllnGaP on GaAs

TLLE4401

Yellow

6.3

17

32

2

581

589

594

2

1.6

1.8

2.2

2

AllnGaP on GaAs

TLLK4401, TLLE4401

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

5V

DC forward current

≤ 60 °C

30

mA

Surge forward current

≤ 10 μs

0.1

A

Power dissipation

≤ 60 °C

80

mW

Junction temperature

100

°C

Operating temperature range

-40 to +100

°C

Storage temperature range

-55 to +100

°C

Soldering temperature

t

≤ 5 s, 2 mm from body

260

°C

Thermal resistance junction/ambient

400

K/W