SQJ262EP datasheet(2/12 Pages) VISHAY

2 / 12 page

SQJ262EP

www.vishay.com

Vishay Siliconix

S17-0665-Rev. A, 15-May-17

Document Number: 75504

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

1.5

2.0

2.5

VDS = VGS, ID = 250 μA

N-Ch 2

1.5

2.0

2.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 60 V

N-Ch 1

μA

VGS = 0 V

VDS = 60 V

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 1

250

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 2

250

On-state drain current a

ID(on)

VGS = 10 V

VDS  5 V

N-Ch 1

VGS = 10 V

VDS  5 V

N-Ch 2

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 2 A

N-Ch 1

0.0295

0.0355



VGS = 10 V

ID = 5 A

N-Ch 2

0.0126

0.0155

VGS = 10 V

ID = 2 A, TJ = 125 °C

N-Ch 1

0.0563

VGS = 10 V

ID = 5 A, TJ = 125 °C

N-Ch 2

0.0253

VGS = 10 V

ID = 2 A, TJ = 175 °C

N-Ch 1

0.0700

VGS = 10 V

ID = 5 A, TJ = 175 °C

N-Ch 2

0.0311

VGS = 4.5 V

ID = 1 A

N-Ch 1

0.0400

0.0480

VGS = 4.5 V

ID = 3 A

N-Ch 2

0.0165

0.0200

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

410

550

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

967

1260

Output capacitance

Coss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

212

280

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

436

570

Reverse transfer capacitance

Crss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

Total gate charge c

VGS = 10 V

VDS = 30 V, ID = 1 A

N-Ch 1

6.5

VGS = 10 V

VDS = 30 V, ID = 2 A

N-Ch 2

14.5

Gate-source charge c

Qgs

VGS = 10 V

VDS = 30 V, ID = 1 A

N-Ch 1

1.4

VGS = 10 V

VDS = 30 V, ID = 2 A

N-Ch 2

2.7

Gate-drain charge c

Qgd

VGS = 10 V

VDS = 30 V, ID = 1 A

N-Ch 1

0.9

VGS = 10 V

VDS = 30 V, ID = 2 A

N-Ch 2

2.1

Gate resistance

f = 1 MHz

N-Ch 1

0.7

1.47

2.2



N-Ch 2

0.3

0.62

0.95

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