SQJ264EP datasheet(2/12 Pages) VISHAY

2 / 12 page

SQJ264EP

www.vishay.com

Vishay Siliconix

S19-1108-Rev. A, 30-Dec-2019

Document Number: 77239

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

N-Ch 1

VGS = 0 V, ID = 250 μA

N-Ch 2

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

N-Ch 1

2.5

3.0

3.5

VDS = VGS, ID = 250 μA

N-Ch 2

2.5

3.0

3.5

Gate-source leakage

IGSS

VDS = 0 V, VGS = ± 20 V

N-Ch 1

± 100

N-Ch 2

± 100

Zero gate voltage drain current

IDSS

VGS = 0 V

VDS = 60 V

N-Ch 1

μA

VGS = 0 V

VDS = 60 V

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 1

VGS = 0 V

VDS = 60 V, TJ = 125 °C

N-Ch 2

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 1

250

VGS = 0 V

VDS = 60 V, TJ = 175 °C

N-Ch 2

250

On-state drain current a

ID(on)

VGS = 10 V

VDS

≥ 5 V

N-Ch 1

VGS = 10 V

VDS

≥ 5 V

N-Ch 2

Drain-source on-state resistance a

RDS(on)

VGS = 10 V

ID = 6 A

N-Ch 1

0.0165

0.0200

VGS = 10 V

ID = 10 A

N-Ch 2

0.0071

0.0086

VGS = 10 V

ID = 6 A, TJ = 125 °C

N-Ch 1

0.0320

VGS = 10 V

ID = 10 A, TJ = 125 °C

N-Ch 2

0.0135

VGS = 10 V

ID = 6 A, TJ = 175 °C

N-Ch 1

0.0390

VGS = 10 V

ID = 10 A, TJ = 175 °C

N-Ch 2

0.0167

Forward transconductance b

gfs

VDS = 10 V, ID = 6 A

N-Ch 1

VDS = 10 V, ID = 10 A

N-Ch 2

Dynamic b

Input capacitance

Ciss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

687

1000

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

1490

2100

Output capacitance

Coss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

313

500

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

777

1100

Reverse transfer capacitance

Crss

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 1

VGS = 0 V

VDS = 25 V, f = 1 MHz

N-Ch 2

Total gate charge c

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

9.2

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

19.2

Gate-source charge c

Qgs

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

3.2

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

6.3

Gate-drain charge c

Qgd

VGS = 10 V

VDS = 30 V, ID = 1.5 A

N-Ch 1

0.8

VGS = 10 V

VDS = 30 V, ID = 3 A

N-Ch 2

1.5

Gate resistance

f = 1 MHz

N-Ch 1

0.35

0.74

1.20

N-Ch 2

0.20

0.42

0.65

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