SI9933CDY datasheet(3/9 Pages) VISHAY

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Si9933CDY

www.vishay.com

Vishay Siliconix

S-81729-Rev. A, 04-Aug-08

Document Number: 68791

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

1234

VDS - Drain-to-Source Voltage (V)

VGS = 5 thru 3.5 V

VGS =1.5 V

VGS =2V

VGS =2.5 V

VGS =3V

0.00

0.04

0.08

0.12

0.16

ID - Drain Current (A)

VGS =4.5 V

VGS =2.5 V

Qg - Total Gate Charge (nC)

VDS =16V

VDS =10V

ID =4.8 A

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0.0

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

300

600

900

1200

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS =- 4.5 V; ID = - 4.8 A

VGS = - 2.5 V; ID = - 3.8 A

ID =20A

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